| abstract |
Systems and methods for including an epitaxial metal layer between a rare earth oxide and a semiconductor layer are described herein. A substrate (102), a first rare earth oxide layer (104) epitaxially grown over the substrate, and a first metal layer (106) epitaxially grown over the rare earth oxide layer; A system and method for growing a layered structure (100) comprising a first semiconductor layer (108) epitaxially grown over a first metal layer is described. |