| abstract |
A semiconductor shield layer for a power cable structure comprises (A) (>) a nonpolar ethylene-based polymer having a density of 0.90 g / cc and a melt index of> 20 g / 10 min at 190 ° C./2.16 kg; B) made from a composition comprising a polar polymer composed of ethylene and an unsaturated alkyl ester having 4 to 20 carbon atoms, (C) acetylene carbon black, and (D) a curing agent, provided that ( 1) The composition has a phase separation structure, and (2) the weight ratio of the nonpolar polymer to the polar polymer is 0.25-4. |