| abstract |
The system and method described herein includes a first semiconductor layer with a first lattice constant and a rare earth pnictide buffer that is epitaxially grown over the first semiconductor, adjacent to the first semiconductor. The first region of the rare earth pnictide buffer material is a buffer material having a net strain of less than 1% and a second semiconductor layer that is epitaxially grown over the rare earth pnictide buffer material, adjacent to the second semiconductor. The second region of the rare earth pnictide buffer may include a layer having a net strain, which is a desired strain, wherein the rare earth pnictide buffer includes one or more rare earth elements and one or more group V elements. Can be included. In some embodiments, the desired distortion is about zero. |