http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019519918-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
filingDate 2017-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2019519918-A
titleOfInvention Atomic layer etching system and method
abstract A processing apparatus includes a processing chamber having a substrate holder, a first gas supply system configured to supply a first source gas into the processing chamber, and a second source gas into the processing chamber. A second gas supply system configured as described above, an energy activation system, and a processing circuit. The processing circuit controls a first processing parameter for the supply of the first source gas, controls a second processing parameter for the supply of the second source gas, a processing chamber parameter and an energy activation system The parameters are controlled to cause the surface of one or more components in the processing chamber to react with the first source gas and the second source gas, and atomic layers from the surface of the one or more components without plasma. Etching is configured to control vacuum system parameters for the removal of one or more reaction gases from the processing chamber.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023282191-A1
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priorityDate 2016-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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