| abstract |
The present disclosure includes: 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one compound comprising at least three hydroxyl groups; 4) at least one compound Carboxylic acid of 5) at least one Group II metal cation; 6) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; And 7) a composition comprising water. The composition effectively exfoliates thick film positive or negative resist or resist residue, and bumps and underlying metallizations on semiconductor substrates (e.g. SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al) , W, Sn, Co, etc.). |