http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019517739-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1836 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02966 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-073 |
| filingDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-06-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2019517739-A |
| titleOfInvention | Ag-doped photovoltaic device and manufacturing method |
| abstract | Doped photovoltaic devices are presented. The photovoltaic device comprises a semiconductor absorber layer or stack disposed between the front contact and the back contact. The absorber layer comprises Ag, doped cadmium, selenium and tellurium, optionally doped with Cu. Ag dopants may be 5 × 10 15 / cm 3 to 2.5 × 10 17 / cm 3 by any of several methods before, during or after depositing the absorber layer. It can be added to the absorber in amounts ranging up to. Photovoltaic devices have improved fill factor and P MAX at higher P T (= product of I SC · V OC ) values (eg, about 160 W), such that they are not doped with Ag An improved conversion efficiency is provided as compared to the device. Improved PT may be the result from increased I SC , increased V OC , or both. [Selected figure] Figure 2 |
| priorityDate | 2016-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.