| abstract |
A high voltage gallium nitride Schottky diode is described that can withstand reverse current leakage as low as 0.4 microamps / mm and up to 2000 volts and over 2000 volts reverse bias voltage. A Schottky diode may include a lateral geometry having an anode located between two cathodes, and the anode-cathode spacing may be less than about 20 micrometers (microns). The diode may include at least one field plate, wherein the at least one field plate is connected to the anode and extends above the anode and beyond the anode towards the cathode. |