http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019509969-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B35-002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C10-0009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03B20-00 |
| filingDate | 2017-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2019509969-A |
| titleOfInvention | Devitrifier for quartz glass crucible crystal growth method |
| abstract | The present technology provides a devitrifying agent for crucibles with improved efficiency over previous devitrifying agents for use in various technical fields, including semiconductor and photovoltaic applications. The devitrifying agent may include (a) barium, and (b) tantalum, tungsten, germanium, tin, or a combination of two or more thereof. The devitrifying agent can be dissolved in the crucible during construction, applied to the final crucible surface, and / or added to the silicon melt used for crystal pulling. The techniques described herein improve sag resistance and provide a devitrified surface for slower and more controlled silica dissolution by liquid silicon melt during silicon crystal growth. [Selection] Figure 1 |
| priorityDate | 2016-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 70.