| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c10320b05f723976a898536f012b60c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
2019-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_908e5eb85f1e27dc79cf35668c705d44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_191b483ec5bc6ab27b7d25437be9f07f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59c2f7312fec34cb11f912637b28d3df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ddc34cc5950f2a224c877e1896e67b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7a34633cea7ead0cd283ce11391a433 |
| publicationDate |
2019-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019215562-A |
| titleOfInvention |
Chemical amplification method and technique for developable bottom anti-reflective coating and colored implant resist |
| abstract |
The present invention relates to the integration of a DBARC process for photolithography used in the manufacture of electronic devices, particularly injection layer lithography, and materials and processes useful for CD / profile control. A method is described for a photosensitive chemically amplified resist chemistry (PS-CAR) for patterning a photosensitive film (eg, a photoresist on an anti-reflective coating) on a semiconductor substrate. With a two-step exposure process, regions with a higher acid concentration can be formed in the photoresist layer. The PS-CAR chemistry can include a photoacid generator (PAG) and a photosensitizer element that promotes the decomposition of the PAG into an acid. The first exposure may be a patterned EUV or UV exposure that produces an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer, thereby increasing the rate of acid generation where the photosensitizer is located in the film stack. [Selection diagram] FIG. 1B |
| priorityDate |
2014-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |