| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-3495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42328
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0425 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11568 |
| filingDate |
2018-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd074e359fb4f797739c44b0360dcdbd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb03f4dad83776af30af72fe70fa6ba1 |
| publicationDate |
2019-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019212857-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
In a semiconductor device having a plurality of memory regions each composed of a split gate type MONOS memory, a threshold voltage of a memory cell is set to a different value for each memory region. A metal film that is a work function film constituting a memory gate electrode of a memory cell in a data area and a metal film that is a work function film constituting a memory gate electrode of a memory cell in a code area are mutually connected. By forming with different materials or with different thicknesses, memory cells having different threshold voltages are formed. [Selection] Figure 4 |
| priorityDate |
2018-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |