| abstract |
An improved carrier-substrate bonding method and article that can withstand high temperature processing conditions. In order to form an article, a thin sheet is disposed on a carrier via a surface modification layer. The article may be subjected to high temperature processing, such as in FEOL semiconductor processing, and a thin sheet is maintained on the carrier so that it is not degassed and not separated from the carrier during processing. On the other hand, the thin sheet can be separated from the carrier by the peeling force at room temperature, and the thin one of the thin sheet and the carrier remains in its original state. An interposer having an array of via holes is formed on a thin sheet and a device is formed on the interposer. The thin sheet may be a substrate on which a semiconductor circuit is formed during FEOL processing. [Selection] Figure 1 |