Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate |
2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bfc1f3dac53465d5978bff2fc35b876 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6163f6668834422fce22a7b18e6b9e00 |
publicationDate |
2019-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2019197872-A |
titleOfInvention |
Semiconductor film forming method and film forming apparatus |
abstract |
A technique capable of forming a semiconductor film with favorable embedding characteristics with high productivity is provided. A method of forming a semiconductor film according to one embodiment of the present disclosure includes forming a semiconductor film in the recess by supplying a semiconductor source gas to a substrate having a recess formed on a surface and the recess is covered with an insulating film. A first step of supplying a halogen-containing etching gas to the substrate to expose the surface of the insulating film above the inner wall of the recess, and etching the semiconductor film so that the semiconductor film remains on the bottom surface of the recess After the second step and after the second step, a halogen-containing semiconductor gas and a hydrogenated semiconductor gas are simultaneously supplied to the substrate to form a semiconductor film on the semiconductor film remaining on the bottom surface of the recess. And a third step. [Selection] Figure 1 |
priorityDate |
2018-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |