| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82cbc291d77c061ac9a216f86ec010a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7f278bf3e3bd12896f71fc0e87dd1684 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-00 |
| filingDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efa1af944056646334d7d67f4b204221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f2f8f11ae2c7666e589deb3196d9dc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7178a59336317b0c32df59228b3135d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25cc4ccf725fa7eb9013673c0f216e93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_253863ea06ac0db5cb672b0ee8b54a18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_962172ecf2bce18a96b7ced4a1885b1b |
| publicationDate |
2019-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019192750-A |
| titleOfInvention |
Method for forming magnetic film and thermoelectric conversion element |
| abstract |
A method for forming a magnetic film and a thermoelectric conversion element capable of increasing the conversion efficiency in a thermoelectric conversion element using a spin Seebeck effect are provided. A target composed mainly of a magnetic material containing oxygen and having an insulating property is sputtered to form an amorphous magnetic film MF on a substrate S, and the amorphous magnetic film MF is heated. Crystallizing the magnetic film MF. Forming the magnetic film MF is supplied to the target with respect to the area of the magnetic circuit that forms the magnetic field that is parallel to the surface to be sputtered of the target and has an intensity of 2000 Oe to 3000 Oe. The power ratio is 3 W / cm 2 or more and 8 W / cm 2 or less, and the temperature of the substrate S is 150 ° C. or less. Crystallizing the magnetic film MF includes disposing the magnetic film MF in the atmosphere and that the temperature of the magnetic film MF is 600 ° C. or higher and 1200 ° C. or lower. [Selection] Figure 3 |
| priorityDate |
2018-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |