http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019192705-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-369
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04N5-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B5-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B5-30
filingDate 2018-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a60209fb77880ea3d41f283d66437e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6385e237209c988cd3bdbe9b42ceeb20
publicationDate 2019-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2019192705-A
titleOfInvention Solid-state imaging device and manufacturing method thereof
abstract Cross-talk of polarized light in a solid-state imaging device including a polarizer is reduced. Of two adjacent unit pixels UPIX in a pixel portion of a solid-state imaging device, one unit pixel UPIX has a plate-like polarizer PLZV, and the other unit pixel UPIX has a plate-like polarizer. PLZH is arranged. The polarizers PLZV extend in the Y-axis direction and are arranged to face each other with a gap in the X-axis direction, and extend from the back surface side of the semiconductor substrate SUB toward the photodiode PD. It penetrates into the photodiode PD. The polarizers PLZH extend in the X-axis direction and are arranged to face each other with a gap in the Y-axis direction, and extend from the back surface side of the semiconductor substrate SUB toward the photodiode PD. It penetrates into the photodiode PD. [Selection] Figure 4
priorityDate 2018-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 19.