http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019189517-A

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filingDate 2019-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43fbe5d8e6957f146163dd16a98c0d6e
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publicationDate 2019-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2019189517-A
titleOfInvention Oxide sintered body, sputtering target, and method for producing oxide thin film
abstract A sputtering target capable of stably performing sputtering and an oxide sintered body for producing the sputtering target are provided. An oxide sintered body according to one embodiment of the present invention is an oxide sintered body containing indium, gallium, and zinc at a ratio satisfying the following formulas (1) to (3): The crystal phase is composed of a crystal phase, and the average grain size of the crystal phase is 15.0 μm or less. 0.01 ≦ In / (In + Ga + Zn) <0.20 (1) 0.10 ≦ Ga / (In + Ga + Zn) ≦ 0.49 (2) 0.50 ≦ Zn / (In + Ga + Zn) ≦ 0.89 (3) [Selection] Figure 4
priorityDate 2018-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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