| abstract |
A highly reliable semiconductor device including a transistor including an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor film, the spin density is 1 × 10 18 spins / cm 3 or less, preferably 1 × 10 1. It has an oxide semiconductor film of 7 spins / cm 3 or less, more preferably 1 × 10 16 spins / cm 3 or less. The oxide semiconductor film has a conductivity of 1 × 10 3 S / cm or less, preferably 1 × 10 2 S / cm or less, more preferably 1 × 10 1 S / cm or less. [Selection] Figure 1 |