http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019184527-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_915269922949d81a90260e5cd5d2df40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L1-22 |
| filingDate | 2018-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0569671bdc6da8bc9bb01d337710ebe3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08f4fe6981c8cf39d60de035a8cc66cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c71ac5a3d46fa1d327a396fa9d592fb1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ecc0b978a09fbced413ec9e6da63002 |
| publicationDate | 2019-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2019184527-A |
| titleOfInvention | Mechanical quantity sensor material |
| abstract | A mechanical quantity sensor material capable of producing a highly sensitive and accurate mechanical quantity sensor element is provided. A mechanical quantity sensor material for forming a pressure-sensitive body whose electrical characteristics are changed by application of stress. The mechanical quantity sensor material includes conductive particles containing RuO 2 , glass, and an oxide semiconductor doped with an N-type impurity. The specific resistance of the oxide semiconductor is 10 Ω · cm to 50 Ω · cm, and the oxide semiconductor contains an inorganic oxide of either silicon dioxide (SiO 2) or titanium oxide (TiO 2). [Selection] Figure 1 |
| priorityDate | 2018-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.