| abstract |
A semiconductor device capable of lowering the annealing temperature is provided. According to one embodiment, a semiconductor device includes a first insulating layer, a first conductive layer provided in the first insulating layer, and a first metal provided in the first insulating layer. A first substrate having a layer and a second metal layer provided between the first metal layer and the first conductive layer and having a linear expansion coefficient larger than that of the first metal layer A second insulating layer, a second metal layer provided in the second insulating layer, and a third metal layer in contact with the first metal layer, and in contact with the first substrate, Prepare. [Selection] Figure 2 |