| abstract |
A semiconductor device with high reliability and capable of realizing a narrow frame is provided. A driving circuit includes a first transistor having a first gate and a second gate that are electrically connected with a semiconductor film interposed therebetween, and one of a source and a drain is connected to a source and a drain of the first transistor. And a second transistor 13 electrically connected to one side. The pixel portion includes a third transistor, a liquid crystal element, and a capacitor, and the liquid crystal element includes a first conductive film having a light-transmitting property electrically connected to one of a source and a drain of the third transistor, Two conductive films, and a liquid crystal layer to which an electric field generated between the first conductive film and the second conductive film is applied. The capacitor element includes a first conductive film, a light-transmitting third conductive film, and a first conductive film. A nitride insulating film positioned between the conductive film and the third conductive film, and the nitride insulating film is positioned between the semiconductor film of the first transistor and the second gate. [Selection] Figure 1 |