| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0243
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2018-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b0bfd4952635c5fc07dd3a37194ea32 |
| publicationDate |
2019-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019140258-A |
| titleOfInvention |
Method for manufacturing silicon carbide semiconductor device and method for manufacturing silicon carbide substrate |
| abstract |
A method of manufacturing a silicon carbide semiconductor device and a method of manufacturing a silicon carbide substrate capable of reducing the lead time and suppressing the deterioration of the semiconductor manufacturing device are provided. A plurality of trenches 33 reaching a predetermined depth d1 from the surface of an n-type epitaxial layer 21 are formed. For example, a TaC film 34, which is a carbide film of a refractory metal, is formed on the surface of a portion (mesa region) 21a sandwiched between adjacent trenches 33 of the n-type epitaxial layer 21 by a sputtering method. The portion of the TaC film 34 on the inner wall of the trench 33 is removed by etching. With the surface of the mesa region 21a covered with the TaC film 34, the inside of the trench 33 is filled with the p-type epitaxial layer 22 grown by the CVD method. Next, the portion 35 of the p-type epitaxial layer 22 protruding on the surface of the parallel pn layer 5 and the TaC film 34 on the surface of the mesa region 21a are connected to the n-type region 3 and the p-type region of the parallel pn layer 5. Grind until 4 is exposed. [Selection] Figure 7 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7303971-B1 |
| priorityDate |
2018-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |