| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73e224665ceb7b15f8e66dfd0ee245c6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4824 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 |
| filingDate |
2018-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be56b926de51818300d32ef7a06208ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60442befcc760e795d826e7d55f8d4f5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68d6a70f3d1013bbeb8da35d2cbef1e7 |
| publicationDate |
2019-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019140169-A |
| titleOfInvention |
Silicon carbide semiconductor device |
| abstract |
A silicon carbide semiconductor device capable of further reducing the in-plane distribution of gate resistance is provided. A silicon carbide semiconductor device includes an upper source electrode including source pad portions SP1 and SP2 and a gate global wiring portion GL extending so as to surround the source pad portions SP1 and SP2. Outer source wiring portions extending so as to surround the gate global wiring portion GL among the upper source electrodes are connected to the source pad portions SP1 and SP2 and the source connection portions SC1 and SC2, respectively. The gate global wiring portion GL includes a first portion g1 located between the substrate corner portions c1 and c2 and in contact with the gate connection wiring portion, a second portion g2 separated from the first portion g1 at the substrate corner portion c1, and a substrate. The substrate is divided at the corners c1 and c2 into the first portion and the third portion g3 divided at the corner c2. The source connection portion SC1 is disposed between the first portion g1 and the second portion g2, and the source connection portion SC2 is disposed between the first portion g1 and the third portion g3. [Selection] Figure 1A |
| priorityDate |
2018-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |