http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019125770-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate | 2018-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab9eb2b8a1809c8b131677a9b2b27450 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c5c817fd512cb8b9a07a0bf262a619d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69ff75c5921e1d21259ddd1fdaeb9b20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_448f960f440eeecb5e1160bc1a492850 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_353a40e0f31f9b52c47c5821c62a33dc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e97c7abcc7223a6eda3d051f33d9c3e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06ce2cc4cc2a17b38127745a98835b3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a39b1d1f5412f3e77622ecfc113fa2d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb0999cc88bffc14d917df176903ea86 |
| publicationDate | 2019-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2019125770-A |
| titleOfInvention | Gallium nitride semiconductor device and method of manufacturing gallium nitride semiconductor device |
| abstract | The relationship between the thickness of a transition layer and the field effect mobility of a GaN-based semiconductor layer has not been clarified. The thickness of the transition layer is (i) when the atomic composition of the metal element constituting the insulating layer has a maximum in the atomic composition distribution, the atomic composition of the metal element having the maximum has a value 1 / of the maximum value. The depth position on the gallium nitride based semiconductor layer side which becomes 2 or the atomic composition of the metal element having no maximum is sufficiently far from the transition layer to the insulating layer side when there is no maximum. A depth position where the atomic composition of the nitrogen element constituting the GaN-based semiconductor layer is 1⁄2 with respect to a position sufficiently separated from the transition layer toward the GaN-based semiconductor layer side; Or (ii) the thickness of a layer provided in contact with the surface of the GaN-based semiconductor layer having a crystal structure and defined by contrast different from both the GaN-based semiconductor layer and the insulating layer in the transmission electron microscope image When we define The thickness of the transfer layer is less than 1.5 nm. [Selected figure] Figure 1 |
| priorityDate | 2017-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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Total number of triples: 58.