| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b55c349b43c3ecba4977fd52cc8f8c67 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J201-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J201-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 |
| filingDate |
2017-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4f1ed54832b5cf422a2565f9c0bfd88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_12bc5b00c78815f2dd10b721001423d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0014a1119c9a39af1795c49594cafe4e |
| publicationDate |
2019-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019121660-A |
| titleOfInvention |
Dicing tape integrated semiconductor back contact film |
| abstract |
The present invention provides a dicing tape-integrated semiconductor back contact film capable of singulating a semiconductor wafer without causing chipping of the semiconductor chip and peeling from the back contact film. The semiconductor back contact film includes a dicing tape having a laminated structure including a substrate and a pressure sensitive adhesive layer, and a semiconductor back contact film peelably in contact with the pressure sensitive adhesive layer of the dicing tape. The linear transmittance A of infrared light of wavelength 1000 nm and the linear transmittance B of infrared light of wavelength 1342 nm are both 20% or more, and the ratio of the linear transmittance A to the linear transmittance B [linear transmittance A (%) / Linear transmittance B (%)] is 0.3 to 1.0. The dicing tape-integrated semiconductor back contact film. [Selected figure] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7122490-B1 |
| priorityDate |
2017-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |