| abstract |
The present invention provides a photoresist topcoat composition having particular applicability as a topcoat layer in an immersion lithography process for the formation of semiconductor devices. SOLUTION: A first polymer which is soluble in an aqueous base and is present in an amount of 70 to 99% by weight based on the total solid content of the composition, a repeating unit of the general formula (IV) and a general formula (V) A photoresist topcoat composition comprising a recurring unit of the following and a non-fluorinated side chain, and a second polymer present in an amount of 1 to 30% by weight, based on the total solids of the composition. In the formula, R 6 represents a linear, branched or cyclic C 1 -C 20 fluoroalkyl, R 7 represents a linear, branched or cyclic C 1 -C 20 fluoroalkyl, and L 3 represents a polyvalent linkage Represents a group, m is an integer of 1 to 5; 【Selection chart】 None |