| abstract |
The present invention provides a resist composition excellent in lithography properties, a compound useful for the resist composition, and a method of forming a resist pattern using the resist composition. A resist composition which generates an acid upon exposure and whose solubility in a developer changes due to the action of the acid, wherein the solubility in the developer changes due to the action of the acid (A) A resist composition (R b1 and R b2 each independently represent —COO − , —COOH or a hydroxyl group, containing any of the compounds (D1) represented by the following general formula (d1) one is -COO - and is .R b3, R b4 and R b5 represents a hydroxyl group, a halogen atom, etc., R b6 to R b8 is an alkyl group or the like .nb3 is an integer of 0 to 4, nb4 And nb5 is an integer of 0 to 2 and nb6 to nb8 is an integer of 0 to 5. m is 1 or 2 and q is an integer of 0 to 3.). [Chemical formula 1] 【Selection chart】 None |