http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019117959-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2019-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dea558a5b190e844556a094eecfd6ea0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3386dee4f0af3d111d55b3326939bf54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4e0623a11f80c164bb8f879d0840692 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a79d3a72fac92cb5c72c307c7be5bf73 |
| publicationDate | 2019-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2019117959-A |
| titleOfInvention | A method of manufacturing a compound semiconductor substrate for epitaxial growth, an epitaxial growth method on a compound semiconductor substrate, and a compound semiconductor substrate. |
| abstract | The present invention provides a compound semiconductor substrate which does not generate resistance abnormality even when stored for a long time, and a method of treating the surface thereof. A method of manufacturing a compound semiconductor substrate according to the present invention includes a step of preparing a compound semiconductor substrate having a mirror-polished surface, a step of cleaning the compound semiconductor substrate after the step of preparing, and the cleaning. And drying the compound semiconductor substrate after the step of covering the surface of the compound semiconductor substrate with an organic substance containing hydrogen (H), carbon (C) and oxygen (O), and the step of covering the organic semiconductor with the organic substance. And a process for producing a compound semiconductor substrate for epitaxial growth. [Selected figure] Figure 3 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022070969-A1 |
| priorityDate | 2011-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.