http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019079073-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78678 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate | 2019-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949501fab1aab8582f126f6a2d4786ac |
| publicationDate | 2019-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2019079073-A |
| titleOfInvention | Liquid crystal display |
| abstract | An object of the present invention is to propose a method for manufacturing a display device having a thin film transistor with high electrical characteristics and reliability with high mass production. In a display device having a reverse-staggered thin film transistor having a channel-etched structure, the inverted-staggered thin film transistor includes a microcrystalline semiconductor film having a gate insulating film formed on a gate electrode and functioning as a channel formation region on the gate insulating film. A buffer layer is formed over the microcrystalline semiconductor film, a pair of source and drain regions is formed over the buffer layer, and a pair of sources is in contact with the source and drain regions. Electrodes and drain electrodes are formed. In the above, the microcrystalline semiconductor film is formed over the gate insulating film in which hydrogen plasma is caused to act on the surface. [Selected figure] Figure 1 |
| priorityDate | 2007-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.