| abstract |
A semiconductor device having a three-dimensional integrated circuit structure capable of high integration is realized. A semiconductor device 1A includes a transistor 10a and a transistor 20a disposed on a substrate 30. The transistor 10a includes a nanowire semiconductor 11 extended in the Z direction above the substrate 30, in which the drain region 12 and the source region 13 opposed in the Z direction, and the channel region 16 therebetween are provided. Have. The transistor 20 a includes a nanowire semiconductor 21 extended in the Z direction, in which the drain region 22 and the source region 23 opposite in the Z direction, and between them and above the channel region 16 are located. Channel region 26 is provided. [Selected figure] Figure 1 |