| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3518dca003902d9f332ad08ac9a6ffe |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-07 |
| filingDate |
2017-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bd6fedecdc3160bafda2937c2653df7 |
| publicationDate |
2019-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019067937-A |
| titleOfInvention |
Semiconductor device, method of manufacturing semiconductor device, and electronic device |
| abstract |
To improve the quality and reliability of a semiconductor device or electronic device provided with a through electrode. A semiconductor device includes a first semiconductor substrate having a through electrode, a first insulating film stacked on a first surface of the first semiconductor substrate, and a top surface of the first insulating film. And the inner wall and the bottom surface of the through electrode are covered with a conductor, and the first insulating film and the second insulating film are laminated on the conductor. And a groove extending from the first surface of the first semiconductor substrate to the first insulating film on the bottom surface. The present technology can be applied to, for example, a packaged solid-state imaging device and the like. [Selected figure] Figure 5 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021066063-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021084918-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021072528-A |
| priorityDate |
2017-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |