Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7806 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0727 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7811 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2017-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2737e42583fa709da6002b0f37fd412b |
publicationDate |
2019-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2019054064-A |
titleOfInvention |
Semiconductor device |
abstract |
The present invention provides a semiconductor device capable of suppressing an increase in on-resistance by suppressing a reduction in the area of an effective region of an active region and suppressing a growth of a stacking fault generated when a forward current flows in a body diode. To do. A semiconductor substrate 10 made of silicon carbide is provided with first and second cells 101a and 101b having a MOS gate structure. The first cell 101a is a normal MOSFET cell. In the second cell 101 b, the gate electrode 8 b is directly connected to the source electrode 14 and fixed to the potential of the source electrode 14. The second cell 101b is configured such that the surface potential of the p-type channel region of the second cell 101b is lower than the surface potential of the p-type channel region of the first cell 101a when the first cell 101a negatively biases the gate electrode 8a. The thickness t1b of the gate insulating film 7b is set to be thinner than the thickness t1a of the gate insulating film 7a of the first cell 101a. [Selected figure] Figure 1 |
priorityDate |
2017-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |