| abstract |
【the purpose】 Provided is a semiconductor device in which a wide band gap compound semiconductor device and a silicon device can be mixedly mounted. 【Constitution】 A silicon substrate having a first surface of a first plane orientation, a silicon oxide layer provided on a first region of the silicon substrate, and a second substrate provided on the silicon oxide layer and different from the first plane orientation A semiconductor device comprising: a first silicon layer having a second plane of plane orientation; and a wide band gap compound semiconductor layer having a hexagonal crystal structure. [Selected figure] Figure 1 |