| abstract |
Chemical mechanical polishing (CMP) compositions, methods, and systems for polishing patterned semiconductor wafers are provided. A CMP composition comprising an abrasive and a water-soluble aluminum compound additive at a pH> 7 suppresses the removal rate of a CMP stop layer (a layer containing silicon such as silicon nitride, silicon oxide, or silicon carbide). . The CMP composition optionally includes a surfactant that assists the wet surface, an erosion inhibitor that provides prevention of erosion to metal lines, biases or trenches, and a pH used to adjust the pH of the CMP polishing composition. Contains a modifier. [Selection figure] None |