http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019046952-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d29f7ac2c7f9be9f7dae1a83bbb5c92 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8505e4b1993e25183870f36c1ee27cb6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a6a2b026703538b9fa6e076cea6ff68 |
| publicationDate | 2019-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2019046952-A |
| titleOfInvention | Cleaning solution for cleaning semiconductor device surface |
| abstract | 【Task】 Materials containing copper, which can sufficiently remove and clean etching stop layers such as photoresist-derived residues and titanium nitride used in the wiring patterning process of semiconductors, materials containing tantalum, and materials containing tantalum It is providing the washing | cleaning liquid which does not damage a low-k film | membrane. [Solution means] A cleaning solution for cleaning the surface of a semiconductor device after forming a via using a photoresist, comprising an aqueous solution containing hydrogen peroxide, a magnesium compound and an alkali, and having a pH of more than 7.0 at 50 ° C. And 10.0 or less. [Selected figure] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021210458-A1 |
| priorityDate | 2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 72.