| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec83ea8e6721b1a5654b038fdb9b223f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7189b0e27cf0c1dea06c04ef66d01f93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9bb71af447bdb124aa7f266cfde5b316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccb7065de5377ff36349ae313c6e7170
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c365540de58c65cedbac7452b17aed9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83a6b571187ddd8e30bfdc53a2d9fdaa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_774003430ab371ca99ec6c5c30f64fa9 |
| publicationDate |
2019-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2019046939-A |
| titleOfInvention |
Substrate processing method and substrate processing apparatus |
| abstract |
The present invention provides a substrate processing method and a substrate processing apparatus capable of favorably eliminating low surface tension liquid on a substrate. SOLUTION: A rinse solution (a treatment solution containing water) on a substrate W is replaced with IPA (low surface tension liquid) to form a liquid film 100. A gas is blown to the central region of the liquid film to form the opening 101 (opening forming step). The opening is enlarged to eliminate the liquid film (opening enlargement step). In the opening enlargement process, the substrate is rotated about the rotation axis A1, and nitrogen gas (gas) is sprayed toward the gas supply position P2 set inside the peripheral edge 101a of the opening on the upper surface of the substrate, The gas supply position is moved towards the periphery. Furthermore, IPA is supplied toward the liquid deposition position P1 set outside the periphery of the opening, and the liquid deposition position is moved toward the peripheral edge of the upper surface of the substrate W. [Selected figure] Figure 5E |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020218351-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7285741-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7233294-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I759725-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020181892-A |
| priorityDate |
2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |