| abstract |
A CMP polishing method and a composition for suppressing dishing of tungsten are provided. A method for chemical mechanical polishing of tungsten, comprising providing a substrate comprising tungsten and an insulator; water, oxidant, arginine or salt thereof, colloidal silica abrasive, dicarboxylic acid as initial components Providing a chemical mechanical polishing composition comprising: an iron (III) ion source, etc .; providing a chemical mechanical polishing pad; providing dynamic contact at the interface between the chemical mechanical polishing pad and the substrate And creating at least a portion of tungsten by providing a chemical mechanical polishing composition at or near the chemical mechanical polishing pad and substrate interface on the polishing surface of the chemical mechanical polishing pad. A method comprising removing and reducing dishing of tungsten features. [Selection figure] None |