| abstract |
A semiconductor device having a vertical transistor capable of suppressing variation in device characteristics is provided. A storage device according to an embodiment includes a first side, a second side, a first end, and a second end, and the first side and the second side are Facing each other, the first end and the second end facing each other, the first side surface and the second side surface being located between the first end portion and the second end portion, and a first layer 1 gate electrode, a second gate electrode, a first conductive layer, a second conductive layer, and a first gate insulating layer provided between the first gate electrode and the first side surface A second gate insulating layer provided between the second gate electrode and the second side surface, and a first metal oxide provided between the first conductive layer and the first end. A physical layer, and a second metal oxide layer provided between the second conductive layer and the second end. [Selection] Figure 3 |