| abstract |
A semiconductor substrate including a layer made of a Ga2O3-based single crystal and excellent in mechanical strength, a semiconductor element including the semiconductor substrate, and a method for manufacturing the semiconductor substrate are provided. A single crystal Ga2O3-based substrate 10 and a polycrystalline substrate 11 are joined, the thickness of the single-crystal Ga2O3-based substrate 10 is thinner than the thickness of the polycrystalline substrate 11, and the fracture toughness value of the polycrystalline substrate 11 is single crystal. Provided is a semiconductor substrate 1 having a fracture toughness value higher than that of a Ga2O3-based substrate 10. [Selection] Figure 1 |