http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019003973-A

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filingDate 2017-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7d252274c95f81e7050d2e445a9ebf7
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publicationDate 2019-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2019003973-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract A characteristic of a semiconductor optical device such as a semiconductor laser and a characteristic deterioration of a silicon optical waveguide are suppressed so that the two can be optically coupled. An optical mode conversion structure is formed by patterning a regrowth layer (third step). The optical mode conversion structure 106 is formed in a state extending in the waveguide direction of the optical waveguide. Further, the optical mode conversion structure 106 is formed in a state where the width becomes narrower as it is farther from the distal end portion 105a of the active layer 105, and is tapered in the waveguide direction in plan view. [Selection] Figure 1H
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2020245935-A1
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priorityDate 2017-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 25.