| abstract |
The present invention relates to a more stable composition comprising a soluble multi-ligand-substituted metal compound, a polyol additive and a solvent, and is useful as a filling material in a photoresist pattern having a microlithographic form of trench or via hole. Here, a filling pattern having good plasma etching resistance in oxygen-based plasma is used as a hard mask for forming a fine pattern on a semiconductor substrate by pattern transfer of the hard mask. Furthermore, the invention relates to the use of said novel composition in a method for manufacturing an electronic device. |