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filingDate 2015-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2018505556-A
titleOfInvention Application of tin-based p-type oxide semiconductor and thin film transistor
abstract The present disclosure provides a p-type metal oxide semiconductor thin film that exhibits good thin film transistor (TFT) characteristics. The p-type metal oxide thin film includes a ternary or more tin-based (Sn-based) p-type oxide such as Sn (II) -MO oxide, in which M is a metal. In some implementations, M is a metal selected from d or p blocks of the periodic table. The oxides disclosed herein exhibit p-type conduction and a wide band gap. A TFT including a channel including a p-type oxide semiconductor and a method of fabrication are also provided. In some implementations, the p-channel TFT has a low off current.
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