http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018502327-A

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filingDate 2015-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2018502327-A
titleOfInvention RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING RESIST COMPOSITION, USE OF PEROVSKITE MATERIAL FOR LITHOGRAPHIC PROCESS AND SUBSTRATE COATED WITH RESIST COMPOSITION
abstract A resist composition is disclosed. The resist composition comprises a perovskite material having a structure having a chemical formula selected from ABX 3 , A 2 BX 4 or ABX 4 . A may be a compound containing an NH 3 group, B may be a metal, and X may be a halogen component. The perovskite material may comprise one or more of the following compounds, halogen mixed perovskite materials, metal mixed perovskite materials and organic ligand mixed perovskite materials. [Selection] Figure 1
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020520469-A
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