abstract |
The present invention includes a method for promoting surface atomic layer etching (ALE). In certain embodiments, the method includes sequential reaction of a metal precursor and a halogen-containing gas. The present invention provides a solid substrate obtained according to any of the methods of the present invention. The present invention further provides a porous substrate obtained according to any of the methods of the present invention. The present invention further provides a patterned solid substrate obtained according to any of the methods of the present invention. |