| abstract |
A semiconductor device suitable for miniaturization is provided. Alternatively, a highly reliable semiconductor device is provided. Alternatively, favorable electrical characteristics are given to a semiconductor device including an oxide semiconductor. An island-shaped semiconductor layer on an insulating surface, a pair of electrodes in contact with a side surface of the semiconductor layer and overlapping a part of the upper surface, and the semiconductor layer positioned between the electrodes. A semiconductor device includes a part and an oxide layer in contact with part of the lower surface of the electrode, a gate electrode overlapping with the semiconductor layer, and a gate insulating layer between the semiconductor layer and the gate electrode. The semiconductor layer includes an oxide semiconductor, and the pair of electrodes includes Al, Cr, Cu, Ta, Ti, Mo, or W. [Selection] Figure 1 |