http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018190966-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d3d6ffd8187147dbd854f5e70a99a88 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239 |
| filingDate | 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a3c0ba2eab7c6453e7f20fd2710bdc2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_865b0a0abd6c04dfe88cc2309c30332e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9aded425184e6de749d9bbf512213bd3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b6b06554cb56ac9eb7713b7f8fba287 |
| publicationDate | 2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018190966-A |
| titleOfInvention | Plane direct magnetization ferromagnetic semiconductor heterojunction device, magnetic storage device using the same, and spin logic device |
| abstract | PROBLEM TO BE SOLVED: To provide a magnetic heterojunction device having a pure interface at the interface between a ferromagnetic layer and a nonmagnetic layer and having high perpendicular magnetic anisotropy energy. SOLUTION: A substrate, a ferromagnetic layer provided adjacent to the substrate or sandwiching an underlayer, and a nonmagnetic layer provided adjacent to the ferromagnetic layer, and the ferromagnetic layer A magnetic heterojunction element having a structure in which a layer and a nonmagnetic layer are laminated with a [001] orientation, and the ferromagnetic layer made of a ferromagnetic material containing iron, a ZnSe, ZnS, I-III-VI2 type chalcone And a non-magnetic layer made of a compound selected from the group consisting of pyrite-type compound semiconductors, and an interface crystal magnetic anisotropy constant (Ks) at a junction interface between the ferromagnetic layer and the non-magnetic layer is 0.78 mJ. / M 2 and the ferromagnetic layer is a perpendicular magnetization layer. [Selection] Figure 1 |
| priorityDate | 2017-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.