http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018186398-A

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filingDate 2017-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb38a9c018c45cd5751475e1c93d5b15
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publicationDate 2018-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2018186398-A
titleOfInvention Solid-state imaging device and electronic device
abstract PROBLEM TO BE SOLVED: To improve transfer efficiency of charge from a charge storage unit to a charge voltage conversion unit via a transfer gate. In a solid-state imaging device according to one aspect of the present technology, a switching unit switches to the LG state at least once before the A / D conversion operation for signal level acquisition, and the HG state at least once. The transfer unit is configured to switch the charge accumulated in the charge accumulation unit to the charge voltage at least twice when switched to the LG state and when switched to the HG state. The charge voltage conversion unit is configured to add the charge transferred when switched to the LG state and the charge transferred when switched to the HG state. It is configured to convert to a voltage signal. The present technology can be applied to, for example, a COMS image sensor. [Selection] Figure 4
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