http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018186282-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2018-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_949501fab1aab8582f126f6a2d4786ac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_834ab6a80d707bdf0e1db754b422cbaf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d86933fb35e41e190924702775dc4d2b |
| publicationDate | 2018-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018186282-A |
| titleOfInvention | Semiconductor device |
| abstract | In a bottom-gate transistor using an oxide semiconductor, when a high gate voltage is applied to a gate electrode layer, it may occur near the end of the drain electrode layer (and near the end of the source electrode layer). A structure in which certain electric field concentration is reduced, deterioration of switching characteristics is suppressed, and reliability is improved is provided. The insulating layer overlying the channel formation region has a tapered cross-sectional shape, and the thickness of the insulating layer overlying the channel formation region is 0.3 μm or less, preferably 5 nm or more and 0.1 μm. m or less. The taper angle θ at the lower end of the cross-sectional shape of the insulating layer overlapping the channel formation region is 6 It is 0 ° or less, preferably 45 ° or less, and more preferably 30 ° or less. [Selection] Figure 1 |
| priorityDate | 2011-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.