http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018182143-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-498 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3735 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-06181 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-492 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-49844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-142 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-585 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-52 |
| filingDate | 2017-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25368647243cfb293e48a2f355dd5ae6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e53437d10e6c11c22eca7fcc42772c0 |
| publicationDate | 2018-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018182143-A |
| titleOfInvention | Semiconductor device |
| abstract | An object of the present invention is to reduce the occurrence of dielectric breakdown while achieving downsizing. In a semiconductor device (10), a side edge (17a1) of a resist member (17a) on the side of a substrate (14) has a position (15a) on a metal base plate (15) directly below a side surface (12a) facing the outer side of a metal plate Between the position 15a and the outer position 15c. The position 15c is a resist member having a height H from the main surface of the metal base plate 15 to the front surface of the insulating plate 11 from the position 15b of the metal base plate 15 directly below the side surface 11a facing the outside of the insulating plate 11. The distance obtained by dividing by the tangent of the contact angle α of the solder 16 when stopped at the edge 17a1 of 17a. As a result, the insulation distance of the conductive pattern 13a with respect to the solder 16 can be sufficiently secured, so that the creepage distance between the conductive pattern 13a and the insulating plate 11 can be reduced. [Selected figure] Figure 6 |
| priorityDate | 2017-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.