http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018182091-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-1156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2017-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19aafad7b93d74642ce65afa04e84b83 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6efbad80ac90209985a51cfcea2bef8c |
| publicationDate | 2018-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2018182091-A |
| titleOfInvention | Semiconductor device and method of manufacturing semiconductor device |
| abstract | The present invention provides a semiconductor device which can be miniaturized or highly integrated. A first insulator disposed on a substrate, an oxide on the first insulator, a second insulator on the oxide, and a conductor on the second insulator. The third insulator on the conductor, the fourth insulator in contact with the side surface of the conductor, and at least the top surface of the oxide, and in contact with the side surface of the fourth insulator and the top surface of the third insulator A fifth insulator, and the oxide includes a first region overlapping with the second insulator, a second region overlapping with the fourth insulator, and a third region in contact with the second region A semiconductor device including a region, at least a portion of the third region being in contact with the fifth insulator, and a region where the conductor and the second insulator do not overlap. [Selected figure] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021220401-A1 |
| priorityDate | 2017-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 77.