http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2018173644-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-32
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filingDate 2018-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2747b3c571f53c0d98897a7cd43c0be9
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publicationDate 2018-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2018173644-A
titleOfInvention Phase shift mask blank, method of manufacturing phase shift mask using the same, and method of manufacturing display device
abstract There is provided a phase shift mask blank used for forming a phase shift mask for a display device having a fine pattern and having an excellent pattern cross-sectional shape and excellent CD uniformity. A phase shift film 30 made of a chromium-based material provided on a transparent substrate is provided between a phase shift layer 31, a reflectance reduction layer 32, and the shift layer and the reflectance reduction layer. And a metal layer 33 having an extinction coefficient higher than the extinction coefficient of the reflectance reduction layer in a wavelength region of 350 nm to 436 nm, and the phase shift between the transmittance and the phase difference of the phase shift film with respect to the exposure light. The film surface reflectance of the phase shift film is 13% or less in the wavelength range of 313 nm to 436 nm while satisfying predetermined optical characteristics necessary for the film. [Selection] Figure 1
priorityDate 2018-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 38.