| abstract |
A semiconductor device capable of reducing on-resistance is provided. A semiconductor device according to an embodiment includes a first and second electrodes, a first gate electrode, and a semiconductor layer having a wider band gap than silicon between the first electrode and the second electrode. A silicon layer between the semiconductor layer and the first electrode, a metal layer between the semiconductor layer and the silicon layer, a first semiconductor region of the first conductivity type in the semiconductor layer, and a silicon layer A first silicon region of a first conductivity type therein, a second silicon region of a second conductivity type between the first silicon region and the first electrode, a first silicon region and a first electrode A third silicon region of a second conductivity type spaced apart from the second silicon region, and a first gate insulating layer between the first gate electrode and the second and third silicon regions, A fourth silicon region of the first conductivity type between the second silicon region and the first electrode, and a third silicon And a fifth silicon region of a first conductivity type between the band and the first electrode. [Selection] Figure 1 |